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HBC848, HBC848_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HBC848, HBC848_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number HBC848, HBC848_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 66.76 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC848_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: HBC848, HBC848_Hi.
Please refer to the document for exact specifications by model.

HBC848 Product details

Description

The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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