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HBC856, HBC856_Hi - PNP EPITAXIAL PLANAR TRANSISTOR

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This datasheet PDF includes multiple part numbers: HBC856, HBC856_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number HBC856, HBC856_Hi
Manufacturer Hi-Sincerity Mocroelectronics
File Size 38.17 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBC856_Hi-SincerityMocroelectronics.pdf
Note This datasheet PDF includes multiple part numbers: HBC856, HBC856_Hi.
Please refer to the document for exact specifications by model.

HBC856 Product details

Description

The HBC856 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature +150 °C Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage

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