Description
www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200514 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No.: 1/5 H50.
Features
* RDS(on)=6mΩ@VGS=10V, ID=30A
* RDS(on)=9mΩ@VGS=4.5V, ID=30A
* Advanced trench process technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for DC/DC Converters and Motor Drivers
* Fully Characterized Avalanche Voltage
Applications
* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel: