H50N03E Features
* RDS(on)=11mΩ@VGS=10V, ID=30A
* RDS(on)=18mΩ@VGS=4.5V, ID=30A
* Advanced trench process technology
* High Density Cell Design for Ultra Low On-Resistance
* Specially Designed for DC/DC Converters and Motor Drivers
* Fully Characterized Avalanche Volta
H50N03E_Hi-SincerityMocroelectronics.pdf
Datasheet Details
H50N03E, H50N03E_Hi
Hi-Sincerity Mocroelectronics
82.71 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: H50N03E, H50N03E_Hi.
Please refer to the document for exact specifications by model.
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H50N03E Distributor
