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H50N03E - N-Channel MOSFET

Download the H50N03E datasheet PDF. This datasheet also covers the H50N03E_Hi variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • RDS(on)=11mΩ@VGS=10V, ID=30A.
  • RDS(on)=18mΩ@VGS=4.5V, ID=30A.
  • Advanced trench process technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for DC/DC Converters and Motor Drivers.
  • Fully Characterized Avalanche Voltage and Current.
  • Improved Shoot-Through FOM 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source D G S Internal Schematic Diagram Maximum Ratings & Th.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H50N03E_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H50N03E
Manufacturer Hi-Sincerity Mocroelectronics
File Size 82.71 KB
Description N-Channel MOSFET
Datasheet download datasheet H50N03E Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
H50N03J N-Channel MOSFET
H50N03U N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H50N03E N-Channel Enhancement-Mode MOSFET (25V, 50A) H50N03E Pin Assignment Tab Features • RDS(on)=11mΩ@VGS=10V, ID=30A • RDS(on)=18mΩ@VGS=4.
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