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H50N03U - N-Channel MOSFET

Download the H50N03U datasheet PDF. This datasheet also covers the H50N03U_Hi variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • RDS(on)=11mΩ@VGS=10V, ID=30A.
  • RDS(on)=18mΩ@VGS=4.5V, ID=30A.
  • Advanced trench process technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for DC/DC Converters and Motor Drivers.
  • Fully Characterized Avalanche Voltage and Current.
  • Improved Shoot-Through FOM D G S Internal Schematic Diagram Maximum Ratings & Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H50N03U_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H50N03U
Manufacturer Hi-Sincerity Mocroelectronics
File Size 86.98 KB
Description N-Channel MOSFET
Datasheet download datasheet H50N03U Datasheet

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Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
H50N03E N-Channel MOSFET
H50N03J N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200520 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H50N03U N-Channel Enhancement-Mode MOSFET (25V, 50A) H50N03U Pin Assignment Tab 3 2 1 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Features • RDS(on)=11mΩ@VGS=10V, ID=30A • RDS(on)=18mΩ@VGS=4.
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