H2N6718L Features
* High Power: 850mW
* High Current: 1A TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 850 mW
* Maximum Voltages and
H2N6718L_Hi-SincerityMocroelectronics.pdf
Datasheet Details
H2N6718L, H2N6718L_Hi
Hi-Sincerity Mocroelectronics
51.28 KB
Npn transistor.
This datasheet PDF includes multiple part numbers: H2N6718L, H2N6718L_Hi.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
H2N6718V NPN Transistor (Hi-Sincerity Mocroelectronics)
H2N60D N-Channel MOSFET (HAOHAI)
H2N60F N-Channel MOSFET (HAOHAI)
H2N60P N-Channel MOSFET (HAOHAI)
H2N60U N-Channel MOSFET (HAOHAI)
H2N6388 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N6426 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
H2N6718L Distributor
