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H2N6517, H2N6517_Hi - NPN EPITAXIAL PLANAR TRANSISTOR

H2N6517 Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: HE6268 Issued Date : 1993.10.05 Revised Date : 2005.01.20 Page No.: 1/5 H2N6517 NPN EPITAXIAL PLANA.
The H2N6517 is designed for general purpose applications requiring high breakdown voltages. High Collector-Emitter Breakdown Volta.

H2N6517 Features

* High Collector-Emitter Breakdown Voltage
* Low Collector-Emitter Saturation Voltage
* The H2N6517 is complementary to H2N6520 TO-92 Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum
* M

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This datasheet PDF includes multiple part numbers: H2N6517, H2N6517_Hi. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H2N6517, H2N6517_Hi
Manufacturer
Hi-Sincerity Mocroelectronics
File Size
51.71 KB
Datasheet
H2N6517_Hi-SincerityMocroelectronics.pdf
Description
NPN EPITAXIAL PLANAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: H2N6517, H2N6517_Hi.
Please refer to the document for exact specifications by model.

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NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics H2N6517-like datasheet