IRFBC42 Datasheet (Harris Corporation)

IRFBC42, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as swi

IRFBC42 Features

* 6.2A and 5.4A, 600V

* rDS(ON) = 1.2Ω and 1.6Ω

* Repetitive Avalanche Energy Rated

* Simple Drive Requirements

* Ease of Paralleling

* Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information P