IRF512, IRF510 - (IRF510 - IRF513) N-Channel Power MOSFETs

Harris Corporation

Datasheet Details

Part number	IRF512, IRF510
Manufacturer	Harris Corporation
File Size	Direct Link
Description	(IRF510 - IRF513) N-Channel Power MOSFETs
Datasheet	IRF510_HarrisCorporation.pdf
Note	This datasheet PDF includes multiple part numbers: IRF512, IRF510. Please refer to the document for exact specifications by model.

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors.

4.9A, and 5.6A, 80V and 100V.
rDS(ON) = 0.54Ω and 0.74Ω.
Single Pulse Avalanche Energy Rated.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER IRF510 IRF511 IRF512 IRF513.

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Published: Apr 5, 2007 |