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SOT-23-3Plastic-Encapsulate Transistors
HX3401S MOSFET(P-Channel)
FEATURES TrenchFET Power MOSFET
MARKING: A19T
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VDS Drain-Source voltage
-20 V
VGS Gate-Source voltage
±12
V
ID Drain current
-3 A
PD Power Dissipation
1W
Tj Junction Temperature
150 ℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=-250uA
-20
V
Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Forward Trans conductance Dynamic Characteristics
Vth(GS) IGSS IDSS
rDS(ON)
gfs
VDS= VGS, ID=-250 uA VDS=0V, VGS=±12V VDS=-20V,
HX3401S Datasheet