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HX3407 - P-Channel Enhancement Mode MOSFET

Description

Note: Hxsemi lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.

Features

  • -30V/-4.5A RDS(ON)= 43mΩ(Typ. ) @ VGS=-10V RDS(ON)= 60mΩ(Typ. ) @ VGS=-4.5V.
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number HX3407
Manufacturer Hexin Semiconductor
File Size 356.70 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet HX3407 Datasheet

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Full PDF Text Transcription

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HX1001 HX3407 P-Channel Enhancement Mode MOSFET Features  -30V/-4.5A RDS(ON)= 43mΩ(Typ.) @ VGS=-10V RDS(ON)= 60mΩ(Typ.) @ VGS=-4.5V  Super High Dense Cell Design  Reliable and Rugged  Lead Free and Green Devices Available (RoHS Compliant) Applications  Power Management in Notebook  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter Ordering and Marking Information Pin Description D G S Note: Hxsemi lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. Hxsemi lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature.
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