HFF630 N-Channel MOSFET

HUASHAN ELECTRONIC

Description

Shantou Huashan Electronic Devices Co.,Ltd.N-Channel MOSFET HFF630 APPLICATIONSL High Voltage High-Speed Switching.ABSOLUTE MAXIMUM RATINGS Ta=2.

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Datasheet Specifications

Part number: HFF630
Manufacturer: HUASHAN ELECTRONIC
File Size: 227.20 KB
Datasheet: HFF630-HUASHANELECTRONIC.pdf
Description: N-Channel MOSFET

Applications

* High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS=1M ) VGSS Gate-Source Voltage ID
* Drain Current Tc=25
* Drain cu

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HFF630 N-Channel MOSFET HUASHAN ELECTRONIC

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