HFF2N60 N-Channel MOSFET

HUASHAN ELECTRONIC

Description

Shantou Huashan Electronic Devices Co.,Ltd.N-Channel MOSFET HFF2N60 APPLICATIONSL High-Speed Switching.ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storag.

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Datasheet Specifications

Part number: HFF2N60
Manufacturer: HUASHAN ELECTRONIC
File Size: 228.41 KB
Datasheet: HFF2N60-HUASHANELECTRONIC.pdf
Description: N-Channel MOSFET

Applications

* High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current Tc=25 5 5 ~1 5 0 150 23W 600V ±30V 2.0A TO-220F 1G 2D 3S ELECTRICAL CHAR

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HFF2N60 N-Channel MOSFET HUASHAN ELECTRONIC

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