HYG028N10NS1B6 N-Channel Enhancement Mode MOSFET

HOOYI

Description

HYG028N10NS1B6 N-Channel Enhancement Mode MOSFET .
Pin7 Pin1 TO-263-6L Pin4 Pin1 Ordering and Marking Information B6 G028N10 XYMXXXXXX Package Code B6 :TO-263-6L Date Code XYMXXXXXX Pin2,3,5,6,7 N-C.

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Datasheet Specifications

Part number: HYG028N10NS1B6
Manufacturer: HOOYI
File Size: 1.50 MB
Datasheet: HYG028N10NS1B6-HOOYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Applications

* Power Switching application
* Uninterruptible Power Supply

HYG028N10NS1B6 Distributors

📁 Related Datasheet

HYG028N10NS1W HYG020N04NA1B HYG020N04NA1P HYG020N04NA1PL HYG020N04NR1B HYG020N04NR1P

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HYG028N10NS1B6 N-Channel Enhancement Mode MOSFET HOOYI

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