HY3506W, HY3506P N-Channel Enhancement Mode MOSFET

HOOYI

Description

HY3506P/W N-Channel Enhancement Mode MOSFET .
100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications.

📥 Download Datasheet

HY3506W Datasheet Preview — This datasheet PDF includes multiple part numbers: HY3506W, HY3506P. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: HY3506W, HY3506P
Manufacturer: HOOYI
File Size: 1.42 MB
Datasheet: HY3506P-HOOYI.pdf
Description: N-Channel Enhancement Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: HY3506W, HY3506P.
Please refer to the document for exact specifications by model.

Applications

* Switching application Power Management for Inverter Systems. S G N-Channel MOSFET Ordering and Marking Information Package Code ÿ YYXXXJWW G P HY3506 ÿ YYXXXJWW G W HY3506 P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device W : TO247-3L Note: HOOYI l

HY3506W Distributors

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HY3506P N-Channel Enhancement Mode MOSFET HOOYI

HOOYI HY3506W-like datasheet