Datasheet4U Logo Datasheet4U.com

HY3215P, HY3215 Datasheet - HOOYI

HY3215P N-Channel Enhancement Mode MOSFET

HY3215P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 150 ±25 175 -55 to 175 120 IDM Pulsed Drain Current ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to.

HY3215-HOOYI.pdf

This datasheet PDF includes multiple part numbers: HY3215P, HY3215. Please refer to the document for exact specifications by model.
HY3215P Datasheet Preview Page 2 HY3215P Datasheet Preview Page 3

Datasheet Details

Part number:

HY3215P, HY3215

Manufacturer:

HOOYI

File Size:

759.00 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: HY3215P, HY3215.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

HY3215 N-Channel Enhancement Mode MOSFET (HOOYI)

HY3215B N-Channel Enhancement Mode MOSFET (HOOYI)

HY3215M N-Channel Enhancement Mode MOSFET (HOOYI)

HY3215PM N-Channel Enhancement Mode MOSFET (HOOYI)

HY3215PS N-Channel Enhancement Mode MOSFET (HOOYI)

HY3210B N-Channel Enhancement Mode MOSFET (HOOYI)

HY3210B N-Channel 100V MOSFET (VBsemi)

HY3210M N-Channel Enhancement Mode MOSFET (HOOYI)

TAGS

HY3215P HY3215 N-Channel Enhancement Mode MOSFET HOOYI

HY3215P Distributor