HY3210P N-Channel Enhancement Mode MOSFET

HOOYI

Description

HY3210P/M/B/PS/PM .
DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications. Switching application. Power Management for Inverter Systems.

📥 Download Datasheet

HY3210P Datasheet Preview — Preview of HY3210P PDF

Datasheet Specifications

Part number: HY3210P
Manufacturer: HOOYI
File Size: 4.61 MB
Datasheet: HY3210P-HOOYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* 100V/120A RDS(ON) = 6.8 mΩ (typ. ) @ VGS=10V
* 100% avalanche tested
* Reliable and Rugged

Applications

* Switching application
* Power Management for Inverter Systems. DS G TO-3PS-3L D DS G TO-3PS-3M G N-Channel MOSFET Ordering and Marking Information S P HY3210 YYÿ XXXJWW G PS HY3210 YYÿ XXXJWW G M HY3210 YYÿ XXXJWW G PM HY3210 YYÿ XXXJWW G B HY3210 YYÿ XXXJWW G Package Code

HY3210P Distributors

📁 Related Datasheet

HY3210NA2B HY3210NA2P HY3003D HY3003U HY3003V HY3008MF

📌 All Tags

HY3210P N-Channel Enhancement Mode MOSFET HOOYI

HOOYI HY3210P-like datasheet