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HY3210P - N-Channel Enhancement Mode MOSFET

HY3210P Description

HY3210P/M/B/PS/PM .
DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications. Switching application. Power Management for Inverter Systems.

HY3210P Features

* 100V/120A RDS(ON) = 6.8 mΩ (typ. ) @ VGS=10V
* 100% avalanche tested
* Reliable and Rugged

HY3210P Applications

* Switching application
* Power Management for Inverter Systems. DS G TO-3PS-3L D DS G TO-3PS-3M G N-Channel MOSFET Ordering and Marking Information S P HY3210 YYÿ XXXJWW G PS HY3210 YYÿ XXXJWW G M HY3210 YYÿ XXXJWW G PM HY3210 YYÿ XXXJWW G B HY3210 YYÿ XXXJWW G Package Code

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Preview of HY3210P PDF
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Datasheet Details

Part number
HY3210P
Manufacturer
HOOYI
File Size
4.61 MB
Datasheet
HY3210P-HOOYI.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET HOOYI
HOOYI HY3210P-like datasheet