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HY1607V, HY1607 N-Channel MOSFET

HY1607V Description

HY1607D/U/V N-Channel Enhancement Mode MOSFET .
G DS G DS TO-252-2L TO-251-3L Applications. Power Management for Inverter Systems.

HY1607V Features

* 68V/70A RDS(ON) = 6.8 m(typ. ) @ VGS=10V
* 100% avalanche tested
* Reliable and Rugged

HY1607V Applications

* Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET D HY1607 YYXXXJWW G U HY1607 YYXXXJWW G Package Code D : TO-252-2L Date Code YYXXX WW U : TO-251-3L Assembly Material G : Lead Free Device Note: HUAYI lead -free products contain molding compounds/d

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HY1607V, HY1607. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HY1607V, HY1607
Manufacturer
HOOYI
File Size
649.84 KB
Datasheet
HY1607-HOOYI.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: HY1607V, HY1607.
Please refer to the document for exact specifications by model.

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N-Channel MOSFET HOOYI
HOOYI HY1607V-like datasheet