HY1606P N-Channel Enhancement Mode MOSFET

HOOYI

Description

HY1606P/B N-Channel Enhancement Mode MOSFET .
DS G TO-220FB-3L G DS TO-263-2L Applications. Switching application. Power Management for Inverter Systems.

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Datasheet Specifications

Part number: HY1606P
Manufacturer: HOOYI
File Size: 622.17 KB
Datasheet: HY1606P-HOOYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* 60V/66A RDS(ON) = 10.4 m(typ. ) @ VGS=10V
* 100% avalanche tested
* Reliable and Rugged

Applications

* Switching application
* Power Management for Inverter Systems. Ordering and Marking Information N-Channel MOSFET P B HY1606 HY1606 YYXXXJWW G YYXXXJWW G Package Code P : TO-220FB-3L Date Code YYXXX WW B: TO-263-2L Assembly Material G : Lead Free Device Note: HUAYI lead -free produc

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HY1606P N-Channel Enhancement Mode MOSFET HOOYI

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