HSD669AT, HSD669AT-HI NPN Transistor

HI-SINCERITY

HSD669AT Description

HI-SINCERITY MICROELECTRONICS CORP.HSD669AT NPN Epitaxial Planar Transistor Spec.No.: H200901 Issued Date : 2009.02.20 Revised Date : Page No.: 1.
Low frequency power amplifier complementary pair with HSB649A TO-126 Absolute Maximum Ratings (TA=25°C). Maximum Temperatures Storage Temp.

HSD669AT Applications

* or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp. ): 10F. ,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R. O. C. Tel:

📥 Download Datasheet

HSD669AT Datasheet Preview — This datasheet PDF includes multiple part numbers: HSD669AT, HSD669AT-HI. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HSD669AT, HSD669AT-HI
Manufacturer: HI-SINCERITY
File Size: 89.67 KB
Datasheet: HSD669AT-HI-SINCERITY.pdf
Description: NPN Transistor
Note: This datasheet PDF includes multiple part numbers: HSD669AT, HSD669AT-HI.
Please refer to the document for exact specifications by model.

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NPN Transistor HI-SINCERITY

HI-SINCERITY HSD669AT-like datasheet