Description
HGTD7N60C3, S E M I C O N D U C T O R HGTD7N60C3S, HGTP7N60C3 June 1996 14A, 600V, UFS Series N-Channel IGBT .
The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistor.
Features
* 14A, 600V at TC = +25oC
* 600V Switching SOA Capability
* Typical Fall Time - 140ns at TJ = +150oC
* Short Circuit Rating
Applications
* operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY
PART NUMBER
PACKAGE
BRAND
HGTD7N60C3
TO-251AA
G7N60C
HGTD7N60C3S
TO-252AA
G7N60