HNM2302 - N-Channel Enhancement Mode Field Effect Transistor

HAOHAI

Datasheet Details

Part number	HNM2302
Manufacturer	HAOHAI
File Size	270.60 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	HNM2302-HAOHAI.pdf

　.
20V, 3.5A, RDS(ON)=60mΩ @VGS=4.5V 　.
High dense cell design for extremely low RDS(ON) 　.
Rugged and reliable 　.
Lead free product is acquired 　.
SOT-23 Package 　.
Marking Code: A2 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302（SOT-23） D HNM2302 N-Channel MOSFETs HNM2302 N-Channel Enhancement Mode Field Effect Transistor 2302 SI2302 AO2302 GM2302 （） G S S SOT-23 G SOT-23 　.

📁 HNM2302 Similar Datasheet

Other Datasheets by HAOHAI

Published: Oct 26, 2025 |