HNM2302ALB - N-Channel Enhancement Mode Field Effect Transistor SMD

HAOHAI

HNM2302ALB Description

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　.

HNM2302ALB Features

* 　
* 20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　
* High dense cell design for extremely low RDS(ON) 　
* Rugged and reliable 　
* Lead free product is acquired 　
* SOT-23 Package 　
* Marking Code: A2SHB 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 Internal Block

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Datasheet Details

Part number: HNM2302ALB
Manufacturer: HAOHAI
File Size: 272.26 KB
Datasheet: HNM2302ALB-HAOHAI.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor SMD

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N-Channel Enhancement Mode Field Effect Transistor SMD HAOHAI

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