HMS85N08K - N-Channel Super Trench II Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS85N08K
Manufacturer	H&M Semiconductor
File Size	576.71 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS85N08K-HMSemiconductor.pdf

HMS85N08K Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =80V,ID =85A RDS(ON)=6.8mΩ , typical (TO-252)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-/ Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS85N08K HMS85N08K TO-252 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter.

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Published: Jul 1, 2025 |