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HMS7N80I - N-Channel Super Junction Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS7N80I
Manufacturer	H&M Semiconductor
File Size	564.22 KB
Description	N-Channel Super Junction Power MOSFET
Datasheet	HMS7N80I-HMSemiconductor.pdf

HMS7N80I Product details

Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

Features

New technology for high voltage device.
Low on-resistance and low conduction losses.
Small package.
Ultra Low Gate Charge cause lower driving requirements.
100% Avalanche Tested.
ROHS compliant VDS 800 V RDS(ON)TYP 840 mΩ ID 7 A.

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Published: Aug 12, 2025 |