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HMS5N90 - N-Channel Super Junction Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS5N90
Manufacturer	H&M Semiconductor
File Size	757.54 KB
Description	N-Channel Super Junction Power MOSFET
Datasheet	HMS5N90-HMSemiconductor.pdf

HMS5N90 Product details

Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

Features

New technology for high voltage device.
Low on-resistance and low conduction losses.
Small package.
Ultra Low Gate Charge cause lower driving requirements.
100% Avalanche Tested.
ROHS compliant VDS 900 V RDS(ON)TYP 1.5 Ω ID 5 A.

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Published: Jun 30, 2025 |