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HMS29N65 - N-Channel Super Junction Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS29N65
Manufacturer	H&M Semiconductor
File Size	743.14 KB
Description	N-Channel Super Junction Power MOSFET
Datasheet	HMS29N65-HMSemiconductor.pdf

HMS29N65 Product details

Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

Features

Optimized body diode reverse recovery performance.
Low on-resistance and low conduction losses.
Small package.
Ultra Low Gate Charge cause lower driving requirements.
100% Avalanche Tested.
ROHS compliant VDS RDS(ON)TYP ID 650 V 96 mΩ 2 A.

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Published: Jul 1, 2025 |