HMS160N10 - N-Channel Super Trench II Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS160N10
Manufacturer	H&M Semiconductor
File Size	796.70 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS160N10-HMSemiconductor.pdf

HMS160N10 Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =100V,ID =160A RDS(ON)=2.7mΩ , typical @ VGS=10V ID=20A.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS160N10 HMS160N10 TO-220 HMS160N10D HMS160N10D TO-263 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=2.

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Published: Jul 1, 2025 |