HMS135N85K - N-Channel Super Trench II Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS135N85K
Manufacturer	H&M Semiconductor
File Size	1.37 MB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS135N85K-HMSemiconductor.pdf

HMS135N85K Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =85V,ID =135A RDS(ON)=3.3mΩ , typical @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-252 DFN5X6-8L D DDD D DDD top view S SSG Top View G SSS Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS135N85K HMS135N85K TO-252 HMS135N85G HMS135N85G DFN5X6-8L Reel Size -.

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Published: Jun 21, 2025 |