HMS125N10D Datasheet - H&M Semiconductor

HMS125N10D N-Channel Super Trench II Power MOSFET

The HMS125N10D uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch.

HMS125N10D Features

* VDS =100V,ID =125A RDS(ON)=3.8mΩ (typical) @ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Pack

HMS125N10D-HMSemiconductor.pdf