HMS125N10D - N-Channel Super Trench II Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HMS125N10D
Manufacturer	H&M Semiconductor
File Size	518.23 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS125N10D-HMSemiconductor.pdf

HMS125N10D Product details

Description

The HMS125N10D uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =100V,ID =125A RDS(ON)=3.8mΩ (typical) @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS125N10D HMS125N10D DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise.

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Published: Jul 1, 2025 |