HM8N100F - N-channel Enhanced VDMOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM8N100F
Manufacturer	H&M Semiconductor
File Size	646.45 KB
Description	N-channel Enhanced VDMOSFET
Datasheet	HM8N100F-HMSemiconductor.pdf

HM8N100F Product details

Description

HM8N100F , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.The package form is TO-220F, which accords with the RoHS standard.

Features

l Fast Switching l Low ON Resistance(Rdson≤6.0Ω) l Low Gate Charge (Typical Data:19.7 nC) l Low Reverse transfer capacitances(Typical:2.2 pF) l 100% Single Pulse avalanche energy Test.

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Published: Jul 1, 2025 |