HM8N60F, HM8N60 - 600V N-Channel MOSFET

H&M Semiconductor

Datasheet Details

Part number	HM8N60F, HM8N60
Manufacturer	H&M Semiconductor
File Size	303.53 KB
Description	600V N-Channel MOSFET
Datasheet	HM8N60-HMSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: HM8N60F, HM8N60. Please refer to the document for exact specifications by model.

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

7.5A, 600V, RDS(on) = 1.20Ω @VGS = 10 V.
Low gate charge ( typical 29nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Ga.

📁 HM8N60F Similar Datasheet

HM80N03K - N-Channel Power MOSFET (H&M semi)
HM810 - Ultra-compact high-power electromagnetic relay (Hongfa Technology)
HM8202 - Standalone Li-Ion Switch Mode Battery Charger (H&M semi)
HM82C11 - Printer Adapter Interface (HMC)
HM8348 - Mouse Controller (HMC)
HM86171 - Color Pallete RAMDAC (HMC)
HM879 - SILICON NPN EPITAXIAL TYPE TRANSISTOR (Hi-Sincerity Mocroelectronics)
HM8810A - Dual N-Channel MOSFET (VBsemi)

Other Datasheets by H&M Semiconductor

Published: Jun 21, 2025 |