HM8205D Dual N-Channel Trench Power MOSFET

H&M Semiconductor

Description

Dual N-Channel Trench Power MOSFET General .
The+0' uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM8205D
Manufacturer: H&M Semiconductor
File Size: 782.81 KB
Datasheet: HM8205D-HMSemiconductor.pdf
Description: Dual N-Channel Trench Power MOSFET

Features

* VDS = 20V,ID =A RDS(ON) < 27mΩ @ VGS =4.5V RDS(ON) < 37mΩ @ VGS =2.5V
* High Power and current handing capability
* Lead free product is acquired

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HM8205D Dual N-Channel Trench Power MOSFET H&M Semiconductor

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