HM8205A Dual N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM8205$ Dual N-Channel Enhancement Mode Power MOSFET .
The HM8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM8205A
Manufacturer: H&M Semiconductor
File Size: 384.66 KB
Datasheet: HM8205A-HMSemiconductor.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 19.5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired

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HM8205A Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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