HM7N80F, HM7N80 Datasheet - H&M Semiconductor

HM7N80F - 800V N-Channel MOSFET

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices ar.

HM7N80F Features

* 7.0A, 800V, RDS(on) = 1.90Ω @VGS = 10 V

* Low gate charge ( typical 27nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability GDS TO-220 GD S TO-220F {

* ◀▲ {

* { Absolute Maximum Ratings T

HM7N80-HMSemiconductor.pdf