HM7N80 - 800V N-Channel MOSFET

Name: HM7N80
SKU: HM7N80-1583422

H&M Semiconductor

Datasheet Details

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

7.0A, 800V, RDS(on) = 1.90Ω @VGS = 10 V.
Low gate charge ( typical 27nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability GDS TO-220 GD S TO-220F {.
◀▲ {.
{ Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-.

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Published: Jul 15, 2025 |