HM6803 - Dual P-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

Part number	HM6803
Manufacturer	H&M Semiconductor
File Size	694.97 KB
Description	Dual P-Channel Enhancement Mode Power MOSFET
Datasheet	HM6803-HMSemiconductor.pdf
Additional preview pages of the HM6803 datasheet.

The HM6803 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = -20V,ID = -3A RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 110mΩ @ VGS=-4.5V DD GG SS Schematic diagram G1 1 S2 2 6 5 D1 S1.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package G2 3 4 D2 Marking and pin Assignment.

📁 Similar Datasheet

HM68 - Miniature Button Inductors (Bi technologies)
HM6818A - Real Time Clock Plus RAM (Hualon Microelectronics)
HM6-6617B883 - 2K x 8 CMOS PROM (Intersil Corporation)
HM6-6642-9 - 512 x 8 CMOS PROM (Intersil Corporation)
HM6-6642B-9 - 512 x 8 CMOS PROM (Intersil Corporation)
HM60 - PRECISION METAL FILM RESISTORS (RCD)
HM6116 - 2048-word X 8bit High Speed CMOS Static RAM (Hitachi Semiconductor)
HM6147H - 4096 x 1-Bit High Speed CMOS SRAM (Hitachi)

Other Datasheets by H&M Semiconductor

Published: Nov 27, 2018 |