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HM6602 - N & P-Channel Enhancement Mode Power MOSFET

HM6602 Description

HM6602 N and P-Channel Enhancement Mode Power MOSFET .
The HM6602 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

HM6602 Features

* N-Channel VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON)

HM6602 Applications

* Load switch
* Power management SOT-23-L top view Package Marking and Ordering Information Device Marking Device Device Package HM6602 HM6602 SOT-23-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter

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Datasheet Details

Part number
HM6602
Manufacturer
H&M Semiconductor
File Size
1.09 MB
Datasheet
HM6602-HMSemiconductor.pdf
Description
N & P-Channel Enhancement Mode Power MOSFET

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📌 All Tags

P-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM6602-like datasheet