Datasheet4U Logo Datasheet4U.com

HM6401 - P-Channel Enhancement Mode Power MOSFET

HM6401 Description

HM6401 P-Channel Enhancement Mode Power MOSFET .
The HM6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM6401 Features

* VDS = -30V,ID = -5.0A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 65mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired

📥 Download Datasheet

Preview of HM6401 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HM6401
Manufacturer
H&M Semiconductor
File Size
750.65 KB
Datasheet
HM6401-HMSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • HM64 - PNP EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
  • HM64YLB36514 - 16M Synchronous Late Write Fast Static RAM (Renesas Technology)
  • HM6-6617B883 - 2K x 8 CMOS PROM (Intersil Corporation)
  • HM6-6642-9 - 512 x 8 CMOS PROM (Intersil Corporation)
  • HM6-6642B-9 - 512 x 8 CMOS PROM (Intersil Corporation)
  • HM60 - PRECISION METAL FILM RESISTORS (RCD)
  • HM6116 - 2048-word X 8bit High Speed CMOS Static RAM (Hitachi Semiconductor)
  • HM6147H - 4096 x 1-Bit High Speed CMOS SRAM (Hitachi)

📌 All Tags

P-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM6401-like datasheet