HM60N03

The HM60N03 is N-Channel Enhancement Mode Power MOSFET designed by H&M Semiconductor.

Product Overview

H&M Semiconductor

Part number	HM60N03
Manufacturer	H&M Semiconductor
File Size	677.66 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM60N03-HMSemiconductor.pdf
Additional preview pages of the HM60N03 datasheet.

The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS =30V,ID =60A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability HM60N03.

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Published: Apr 30, 2024 |