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HM4N65 - 650V N-Channel MOSFET

HM4N65 Description

HM4N65 / HM4N65F HM4N65 / HM4N65F 650V N-Channel MOSFET General .
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

HM4N65 Features

* 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V
* Low gate charge ( typical 15nC)
* High ruggedness
* Fast wsitching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-

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Datasheet Details

Part number
HM4N65
Manufacturer
H&M Semiconductor
File Size
416.61 KB
Datasheet
HM4N65-HMSemiconductor.pdf
Description
650V N-Channel MOSFET

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650V N-Channel MOSFET H&M Semiconductor
H&M Semiconductor HM4N65-like datasheet