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HM4N10PR - N-Channel Enhancement Mode Power MOSFET

HM4N10PR Description

N-Channel Enhancement Mode Power MOSFET .
The HM4N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM4N10PR Features

* VDS = 100V,ID = 4A RDS(ON)

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Datasheet Details

Part number
HM4N10PR
Manufacturer
H&M Semiconductor
File Size
487.56 KB
Datasheet
HM4N10PR-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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