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HM4853B - P-Channel Enhancement Mode Power MOSFET

HM4853B Description

HM4853B P-Channel Enhancement Mode Power MOSFET .
The HM4853B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM4853B Features

* VDS = -12V,ID = -8A RDS(ON) < 30mΩ @ VGS=-4.5V RDS(ON) < 45mΩ @ VGS=-2.5V
* High power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
HM4853B
Manufacturer
H&M Semiconductor
File Size
480.90 KB
Datasheet
HM4853B-HMSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM4853B-like datasheet