HM4850 Dual N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4850 Dual N-Channel Enhancement Mode Power MOSFET .
The HM4850 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM4850
Manufacturer: H&M Semiconductor
File Size: 637.72 KB
Datasheet: HM4850-HMSemiconductor.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS =40V,ID =5.0A RDS(ON) < 40mΩ @ VGS=10V RDS(ON) < 65mΩ @ VGS=4.5V Schematic diagram
* High density cell design for ultra low Rdson

HM4850 Distributors

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HM4850 Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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