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HM4449 - P-Channel Enhancement Mode Power MOSFET

HM4449 Description

HM4449 P-Channel Enhancement Mode Power MOSFET .
The HM4449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

HM4449 Features

* VDS = -30V,ID = -7A RDS(ON) < 70mΩ @ VGS=-4.5V RDS(ON) < 42mΩ @ VGS=-10V
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
HM4449
Manufacturer
H&M Semiconductor
File Size
464.12 KB
Datasheet
HM4449-HMSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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