Datasheet4U Logo Datasheet4U.com

HM4443 - P-Channel Enhancement Mode Power MOSFET

HM4443 Description

HM4443 P-Channel Enhancement Mode Power MOSFET .
The HM4443 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection appli.

HM4443 Features

* VDS = -40V,ID = -5.0A RDS(ON) < 126mΩ @ VGS=-4.5V RDS(ON) < 85mΩ @ VGS=-10V
* High power and current handing capability
* Lead free product is acquired

📥 Download Datasheet

Preview of HM4443 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HM4443
Manufacturer
H&M Semiconductor
File Size
412.26 KB
Datasheet
HM4443-HMSemiconductor.pdf
Description
P-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • HM44 - NPN EPITAXIAL PLANAR TRANSISTOR (Hi-Sincerity Mocroelectronics)
  • HM4430 - N-Channel 30V MOSFET (VBsemi)
  • HM4454 - N-Channel 100V MOSFET (VBsemi)
  • HM4487 - P-Channel 100V MOSFET (VBsemi)
  • HM4488 - N-Channel 150-V MOSFET (VBsemi)
  • HM4-6514-B - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM4-6516-9 - 2K x 8 CMOS RAM (Intersil Corporation)
  • HM4-65162-9 - 2K x 8 Asynchronous CMOS Static RAM (Intersil Corporation)

📌 All Tags

P-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM4443-like datasheet