HM4410B N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4410B N-Channel Enhancement Mode Power MOSFET .
The HM4410B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM4410B
Manufacturer: H&M Semiconductor
File Size: 482.06 KB
Datasheet: HM4410B-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =30V,ID =12A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram
* High density cell design for ultra low Rdson

HM4410B Distributors

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HM4410B N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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