HM4410 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

30V N-Channel Enhancement-Mode MOSFET 30V N MOS HM4410 VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 9.0mΩ RDS(ON), Vgs@4.5V, Ids@10A = 12mΩ .

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Datasheet Specifications

Part number: HM4410
Manufacturer: H&M Semiconductor
File Size: 329.35 KB
Datasheet: HM4410-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM Package Dimensions Marking : DD D D 8765 Date Code 4410 12 3 4 SS SG REF. A B C D E F Millimeter Min. Max. 5.80 6.20

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HM4410 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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