HM4264B N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM4264B N-Channel Enhancement Mode Power MOSFET .
The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM4264B
Manufacturer: H&M Semiconductor
File Size: 581.22 KB
Datasheet: HM4264B-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 50V,ID =1A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

HM4264B Distributors

📁 Related Datasheet

HM42 HM4-6514-B HM4-6516-9 HM4-65162-9 HM4-65162B-9 HM4-65162C-9

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HM4264B N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM4264B-like datasheet