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HM4264A - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM4264A
Manufacturer	H&M Semiconductor
File Size	617.66 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4264A-HMSemiconductor.pdf

HM4264A Product details

Description

The HM4264A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 60V,ID =12.5A RDS(ON) < 17mΩ @ VGS=10V (Typ:12.6mΩ) RDS(ON) < 22mΩ @ VGS=4.5V (Typ:16mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

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Published: Jul 14, 2025 |